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BB402M build in biasing circuit mos fet ic vhf rf amplifier ade-208-716a (z) 2nd. edition dec. 1998 features build in biasing circuit; to reduce using parts cost & pc board space. low noise characteristics; (nf = 1.7 db typ. at f = 200 mhz) withstanding to esd; build in esd absorbing diode. withstand up to 240v at c=200pf, rs=0 conditions. provide mini mold packages; mpak-4r(sot-143 var.) outline mpak-4r 2 1 4 3 1. source 2. drain 3. gate2 4. gate1 notes: 1. marking is ?x. 2. BB402M is individual type number of hitachi bbfet.
BB402M 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 12 v gate1 to source voltage v g1s +10 ?0 v gate2 to source voltage v g2s 10 v drain current i d 25 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 12v i d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +10 v i g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 10v i g2 = 10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +9v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss 100 na v g2s = 9v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.4 0.7 1.0 v v ds = 9v, v g2s = 6v, i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.4 0.7 1.0 v v ds = 9v, v g1s = 9v, i d = 100 m a drain current i d(op) 9 1318mav ds = 9v, v g1 = 9v, v g2s = 6v r g = 120k w forward transfer admittance |y fs | 1520 msv ds = 9v, v g1 = 9v, v g2s =6v r g = 120k w , f = 1khz input capacitance c iss 2.2 3.0 4.0 pf v ds = 9v, v g1 = 9v output capacitance c oss 0.8 1.1 1.5 pf v g2s =6v, r g = 120k w reverse transfer capacitance c rss 0.017 0.04 pf f = 1mhz power gain pg 22 26 db v ds = 9v, v g1 = 9v, v g2s =6v noise figure nf 1.7 2.2 db r g = 120k w , f = 200mhz
BB402M 3 main characteristics power gain, noise figure test circuit gate 2 source drain gate 1 r g a i d v g1 v g2 v g2 input (50 w ) 1000p 36p 1000p l1 v = v d g1 r g bbfet rfc output (50 w ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k 120k v t v t unit resistance ( w ) capacitance (f) 1sv70 l1: f 1mm enameled copper wire,inside dia 10mm, 2turns l2: f 1mm enameled copper wire,inside dia 10mm, 2turns rfc: f 1mm enameled copper wire,inside dia 5mm, 2turns test circuit for operating items (i , |yfs|, ciss, coss, crss, nf, pg) d(op)
BB402M 4 200 150 100 50 0 50 100 150 200 25 20 15 10 5 0 1.2 2.4 3.8 4.8 6.0 20 16 12 8 4 0 246810 0 2 46810 25 20 15 10 5 56 k w 68 k w 82 k w 100 k w 120 k w 150 k w 180 k w r = 270 k g w v = 6 v v = v g2s g1 ds 120 k w 100 k w 82 k w 68 k w r = 220 k g w 150 k w 180 k w 56 k w v = 9 v r = 100 k w ds g 220 k w 200 k w v = v = 9 v ds g1 v = 1 v g2s 6 v 5 v 4 v 3 v 2 v channel power dissipation pch (mw) ambient temperature ta (?c) maximum channel power dissipation curve drain to source voltage v (v) ds drain current i (ma) d typical output characteristics drain current i (ma) d drain current i (ma) d gate2 to source voltage v (v) g2s gate1 voltage v (v) g1 drain current vs. gate1 voltage drain current vs. gate2 to source voltage
BB402M 5 20 16 12 8 4 0 2 46810 20 16 12 8 4 0 2 46810 v = 1 v g2s v = 9 v r = 120 k w ds g 4 v 3 v 2 v v = 9 v r = 150 k w ds g 25 20 15 10 5 0 2 46810 25 20 15 10 5 0 2 46810 w v = 9 v r = 100 k f = 1 khz ds g v = 1 v g2s 2 v 4 v 3 v v = 1 v g2s w v = 9 v r = 120 k f = 1 khz ds g 2 v 5 v 6 v v = 1 v g2s 2 v 4 v 3 v 5 v 6 v 3 v 5 v 6 v 4 v 5 v 6 v drain current i (ma) d forward transfer admittance |y | (ms) fs gate1 voltage v (v) g1 gate1 voltage v (v) g1 drain current vs. gate1 voltege drain current i (ma) d gate1 voltage v (v) g1 drain current vs. gate1 voltege forward transfer admittance vs. gate1 voltage gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage forward transfer admittance |y | (ms) fs
BB402M 6 25 20 15 10 5 0 2 46810 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 30 25 20 15 10 5 0 510152025 30 v = 9 v v = 9 v v = 6 v r = variable f = 200 mhz ds g1 g2s g v = 9 v v = 9 v v = 6 v f = 200 mhz ds g1 g2s 0 4 3 2 1 10 20 50 100 200 500 1000 v = 9 v v = 9 v v = 6 v f = 200 mhz ds g1 g2s w v = 9 v r = 150 k f = 1 khz ds g v = 1 v g2s 2 v 6 v 5 v 4 v 3 v forward transfer admittance |y | (ms) fs forward transfer admittance vs. gate1 voltage gate1 voltage v (v) g1 power gain vs. gate resistance gate resistance r (k ) g w power gain pg (db) power gain pg (db) power gain vs. drain current drain current i (ma) d noise figure vs. gate resistance gate resistance r (k ) g w noise figure nf (db)
BB402M 7 60 50 40 30 20 10 0 12345 0 510152025 30 4 3 2 1 0 1234 5 v = 9 v v = 9 v v = 6 v r = variable f = 200 mhz ds g1 g2s g v = 9 v v = 9 v v = 6 v r = 120 k f = 200 mhz ds g1 g2s g w 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 v = 9 v v = 9 v v = 6 v ds g1 g2s 67 6 6 5 4 3 2 1 v = 9 v v = 9 v r = 120 k f = 1 mhz ds g1 g w gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v (v) g2s noise figure nf (db) noise figure vs. drain current drain current i (ma) d input capacitance ciss (pf) input capacitance vs. gate2 to source voltage gate2 to source voltage v (v) g2s drain current i (ma) d drain current vs. gate resistance gate resistance r (k ) g w
BB402M 8 10 5 4 3 2 1.5 1 .8 e2 e3 e4 e5 e10 .6 .4 .2 0 e.2 e.4 e.6 e.8 e1 e1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0? 30? 60? 90? 120? 150? 180? e150? e90? e60? e30? e120? scale: 0.01 / div. 0? 30? 60? 90? 120? 150? 180? e150? e90? e60? e30? e120? 10 5 4 3 2 1.5 1 .8 e2 e3 e4 e5 e1 0 .6 .4 .2 0 e.2 e.4 e.6 e.8 e1 e1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 120 k g2s g s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 120 k g2s g test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 120 k g2s g test condition : 50 1000 mhz (50 mhz step) ds w g1 v = 9 v , v = 9 v v = 6 v , r = 120 k g2s g
BB402M 9 sparameter (v ds = v g1 = 9v, v g2s = 6v, r g = 120k w , zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.988 ?.2 2.13 174.1 0.00052 90.0 0.985 ?.3 100 0.986 ?0.4 2.13 167.9 0.00087 72.5 0.993 ?.6 150 0.979 ?6.0 2.12 161.6 0.00156 79.4 0.992 ?.5 200 0.964 ?1.5 2.08 155.2 0.00226 78.4 0.990 ?.5 250 0.948 ?6.9 2.04 149.1 0.00254 71.0 0.987 ?.6 300 0.939 ?2.0 2.00 143.0 0.00339 72.0 0.985 ?1.4 350 0.920 ?7.3 1.95 137.3 0.00335 59.0 0.982 ?3.3 400 0.904 ?2.3 1.91 131.5 0.00338 66.3 0.978 ?5.3 450 0.885 ?7.1 1.86 125.7 0.00351 62.2 0.974 ?7.1 500 0.864 ?1.7 1.81 120.1 0.00347 56.6 0.970 ?8.9 550 0.848 ?6.5 1.76 115.1 0.00355 61.5 0.966 ?1.0 600 0.826 ?0.9 1.70 110.1 0.00300 61.4 0.961 ?2.7 650 0.808 ?5.0 1.66 104.7 0.00289 51.1 0.957 ?4.5 700 0.789 ?9.4 1.61 100.3 0.00246 57.6 0.952 ?6.6 750 0.773 ?3.7 1.56 95.4 0.00211 70.0 0.947 ?8.3 800 0.755 ?7.9 1.51 90.5 0.00166 77.5 0.943 ?0.2 850 0.735 ?2.1 1.47 85.9 0.00165 114.5 0.937 ?2.2 900 0.721 ?6.3 1.42 81.3 0.00123 114.5 0.933 ?4.1 950 0.703 ?0.7 1.39 76.9 0.00176 145.8 0.927 ?5.9 1000 0.677 ?3.9 1.34 72.4 0.00204 164.0 0.923 ?7.9
BB402M 10 package dimensions unit: mm 0.16 0 0.1 0.8 + 0.1 e 0.06 0.85 0.95 1.8 0.65 0.1 1.5 0.65 1.1 0.95 0.95 1.9 2.95 0.4 + 0.1 e 0.05 0.6 + 0.1 e 0.05 0.4 + 0.1 e 0.05 0.4 + 0.1 e 0.05 2.8 0.2 4 3 1 2 0.2 0.2 0.15 0.1 0.1 hitachi code eiaj jedec mpake4r
BB402M 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca 94005-1897 tel: <1> (800) 285-1601 fax: <1> (303) 297-0447 for further information write to:

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